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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3549 DESCRIPTION *High Voltage *High Speed Switching *High Reliability APPLICATIONS *Switching regulators *DC-DC converter *Solids state relay *General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range ww w scs .i VALUE 900 800 10 3 1 40 150 -55~150 UNIT V V .cn mi e V A A PC TJ Tstg W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 4.16 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 10mA; IB= 0 IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 1A; IB= 0.2A B 2SC3549 MIN 800 900 10 TYP. MAX UNIT V V V 1.0 1.5 1.0 1.0 V V mA mA IC= 1A; IB= 0.2A B VCB= 900V; IE= 0 VEB= 10V; IC= 0 Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w scs .i w IC= 1A ; VCE= 5V .cn mi e 10 1.0 4.0 0.8 s s s IC= 2A , IB1= 0.4A; IB2= -0.8A RL=150; PW= 20s; Duty2% isc Websitewww.iscsemi.cn 2 |
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